收藏本站
A Product Line of
Diodes Incorporated
DMN4034SSS
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source voltage
Characteristic
Symbol
V DSS
Value
40
Unit
V
Gate-Source voltage
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
(Note 2)
(Note 7)
(Note 7)
V GS
E AS
I AS
± 20
27
15.25
V
mJ
A
(Note 4)
7.2
Continuous Drain current
V GS = 10V
T A = 70°C (Note 4)
I D
5.8
A
(Note 3)
5.4
Pulsed Drain current
V GS = 10V
(Note 5)
I DM
33.0
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 4)
(Note 5)
I S
I SM
4.1
33.0
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 6)
P D
R θ JA
R θ JL
T J , T STG
1.56
12.5
2.8
22.5
80
44.5
37
-55 to 150
W
mW/ ° C
° C/W
° C
Notes:
2. AEC-Q101 V GS maximum is ± 16V.
3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note (3), except the device is measured at t ≤ 10 sec.
5. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300μs. The pulse current is limited by the maximum junction temperature.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
7. UIS in production with L = 100μH, V DD = 40V.
DMN4034SSS
Document Number DS32106 Rev 2 - 2
2 of 9
www.diodes.com
January 2012
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMN4036LK3-13 MOSFET N-CH 40V 8.5A DPAK
DMN4060SVT-7 MOSFET N-CH 45V 4.8A TSOT26
DMN4800LSS-13 MOSFET N-CH 30V 9A 8SOP
DMN4800LSSL-13 MOSFET N-CH 30V 8A SO-8
DMN5010VAK-7 MOSFET DUAL N-CH 50V SOT-563
DMN55D0UT-7 MOSFET N-CH 50V 160MA SOT-523
DMN5L06-7 MOSFET N-CH 50V 280MA SOT23-3
DMN5L06DMK-7 MOSFET DUAL N-CHAN 50V SOT-26
相关代理商/技术参数
DMN4036LK3 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN4036LK3_10 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN4036LK3-13 功能描述:MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN4040SK3 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN4040SK3-13 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN4060SVT-7 功能描述:MOSFET MOSFET BVDSS: 41V-60 1V-60V TSOT26 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN4468LSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN4468LSS-13 功能描述:MOSFET N-CHAN ENHNCMNT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube